一种5dbm BiCMOS 90°移相器,单电压调谐,用于毫米波波束转向

Luca Steinweg, P. V. Testa, C. Carta, F. Ellinger
{"title":"一种5dbm BiCMOS 90°移相器,单电压调谐,用于毫米波波束转向","authors":"Luca Steinweg, P. V. Testa, C. Carta, F. Ellinger","doi":"10.1109/ICM52667.2021.9664900","DOIUrl":null,"url":null,"abstract":"This work studies a concept for a 90° vector-sum phase shifter operating at 54.6GHz, which delivers a high output power over a wide bandwidth of 20GHz, corresponding to a relative bandwidth of 37.2%. The circuit was designed to control the phase in a local-oscillator chain and was realized in a 130nm SiGe BiCMOS technology. A root mean square (RMS) magnitude error of only 0.23dB is paired with an RMS phase error of 0.89dB, achieving linear control with only one un-calibrated analog voltage. An output-referred 1dB-compression point oP1dB of 5.0dBm is achieved at 60GHz with 11.3dB gain and a power-added efficiency of 6.3%. The high output power qualifies this circuit to directly drive state-of-the-art frequency multipliers and leverage their multiplication factor to reach mm-wave bands with 360° of available phase control. To the best knowledge of the authors, this circuit demonstrates the highest output power and power-added efficiency reported for phase shifters operating at about 60GHz or above, while still providing high power gain.","PeriodicalId":212613,"journal":{"name":"2021 International Conference on Microelectronics (ICM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 5 dBm BiCMOS 90° Phase Shifter with Single-Voltage Tuning for mm-Wave Beam Steering\",\"authors\":\"Luca Steinweg, P. V. Testa, C. Carta, F. Ellinger\",\"doi\":\"10.1109/ICM52667.2021.9664900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work studies a concept for a 90° vector-sum phase shifter operating at 54.6GHz, which delivers a high output power over a wide bandwidth of 20GHz, corresponding to a relative bandwidth of 37.2%. The circuit was designed to control the phase in a local-oscillator chain and was realized in a 130nm SiGe BiCMOS technology. A root mean square (RMS) magnitude error of only 0.23dB is paired with an RMS phase error of 0.89dB, achieving linear control with only one un-calibrated analog voltage. An output-referred 1dB-compression point oP1dB of 5.0dBm is achieved at 60GHz with 11.3dB gain and a power-added efficiency of 6.3%. The high output power qualifies this circuit to directly drive state-of-the-art frequency multipliers and leverage their multiplication factor to reach mm-wave bands with 360° of available phase control. To the best knowledge of the authors, this circuit demonstrates the highest output power and power-added efficiency reported for phase shifters operating at about 60GHz or above, while still providing high power gain.\",\"PeriodicalId\":212613,\"journal\":{\"name\":\"2021 International Conference on Microelectronics (ICM)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM52667.2021.9664900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM52667.2021.9664900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

这项工作研究了工作在54.6GHz的90°矢量和移相器的概念,该移相器在20GHz的宽带宽上提供高输出功率,对应于37.2%的相对带宽。该电路设计用于控制本振链中的相位,并在130nm SiGe BiCMOS技术上实现。均方根(RMS)幅度误差仅为0.23dB, RMS相位误差为0.89dB,仅用一个未校准的模拟电压实现线性控制。在60GHz下实现5.0dBm的输出参考1db压缩点oP1dB,具有11.3dB增益和6.3%的功率附加效率。高输出功率使该电路能够直接驱动最先进的乘频器,并利用其倍增系数达到具有360°可用相位控制的毫米波频段。据作者所知,该电路展示了在大约60GHz或更高频率下工作的移相器的最高输出功率和功率附加效率,同时仍然提供高功率增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 5 dBm BiCMOS 90° Phase Shifter with Single-Voltage Tuning for mm-Wave Beam Steering
This work studies a concept for a 90° vector-sum phase shifter operating at 54.6GHz, which delivers a high output power over a wide bandwidth of 20GHz, corresponding to a relative bandwidth of 37.2%. The circuit was designed to control the phase in a local-oscillator chain and was realized in a 130nm SiGe BiCMOS technology. A root mean square (RMS) magnitude error of only 0.23dB is paired with an RMS phase error of 0.89dB, achieving linear control with only one un-calibrated analog voltage. An output-referred 1dB-compression point oP1dB of 5.0dBm is achieved at 60GHz with 11.3dB gain and a power-added efficiency of 6.3%. The high output power qualifies this circuit to directly drive state-of-the-art frequency multipliers and leverage their multiplication factor to reach mm-wave bands with 360° of available phase control. To the best knowledge of the authors, this circuit demonstrates the highest output power and power-added efficiency reported for phase shifters operating at about 60GHz or above, while still providing high power gain.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信