低压dram的电荷转移呈现和有效预充负字线方案

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221230

J. Sim, Young-Gu Gang, K. Lim, Joong-Yong Choi, Sang-Keun Kwak, K. Chun, Jei-Hwan Yoo, D.I. Seo, Sooin Cho

{"title":"低压dram的电荷转移呈现和有效预充负字线方案","authors":"J. Sim, Young-Gu Gang, K. Lim, Joong-Yong Choi, Sang-Keun Kwak, K. Chun, Jei-Hwan Yoo, D.I. Seo, Sooin Cho","doi":"10.1109/VLSIC.2003.1221230","DOIUrl":null,"url":null,"abstract":"A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs\",\"authors\":\"J. Sim, Young-Gu Gang, K. Lim, Joong-Yong Choi, Sang-Keun Kwak, K. Chun, Jei-Hwan Yoo, D.I. Seo, Sooin Cho\",\"doi\":\"10.1109/VLSIC.2003.1221230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.\",\"PeriodicalId\":270304,\"journal\":{\"name\":\"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2003.1221230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2003.1221230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用0.12 /spl mu/m技术实现了256 Mb SDRAM，验证了两种适合移动应用的电路方案。为了实现快速的低压传感和稳健的工作，提出了一种电荷转移呈现方法。利用前置充电灭能器提高生产效率，还提出了新的负字线方案，绕过大部分放电电流到VSS，而无需切换控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs

A 256 Mb SDRAM is implemented with a 0.12 /spl mu/m technology to verify two circuit schemes suitable for mobile application. A charge transferred presensing is proposed to achieve fast low-voltage sensing and robust operation. With a precharge disabler for productivity, new negative word-line scheme is also proposed to bypass the majority of discharging current to VSS without switching control.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

自引率

0.00%

发文量