Si高速光电二极管的辐照缺陷降解及低温修复

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1263225

J. S. Laird, T. Hirao, S. Onoda, T. Kamiya

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引用次数: 2

摘要

摘要/ abstract摘要:通信p*i-n+光电二极管的高速特性，包括频率响应和响应都受到空间高辐射场的影响。高能粒子产生的深能级降低了信号强度，减少了重组时间和暗电流的产生，降低了信噪比(SNR)。在之前的研究中已经提出使用较低的温度作为恢复SMI的手段。本文从理论上探讨了利用技术CAD仿真的可能性。

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Degradation of Si high-speed photodiodes by irradiation induced defects and restoration at low temperature

Abstrocr- The high-speed characteristics of communication p*i-n+ photodiodes mcluding frequency respoare and responsMty are both degraded by high radiation fields in space. Deep levels generated by high-energy particles decrease the signal strength and reduce the generation reambination ldetime and dark curreui, reducing the signal-to noiae ratio (SNR), The use of lower temperatures as a means of restoring the SMI has been proposed in previous studies. Here we investigate the possibility theoretically using Technology CAD simulation.

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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