重复弯曲应力作用下柔性LTPS tft的退化

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608098

Wei Jiang, Qi Shan, Huaisheng Wang, Dongli Zhang, Mingxiang Wang

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引用次数: 3

摘要

研究了动态弯曲应力对p型低温柔性多晶硅tft降解的影响。反复弯曲应力导致TFT特性退化，如导通电流增加、正阈值电压偏移和“驼峰”现象。采用有限元方法分析了TFT结构内部的应变分布。退化与弯曲循环次数和弯曲应力引起的应变近似呈线性趋势。

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Degradation of flexible LTPS TFTs under repetitive bending stress

The effect of dynamic bending stress on the degradation of p-type flexible low-temperature poly-Si TFTs is investigated. Repeated bending stress causes TFT characteristic degradation, such as on-state current increase, positive threshold voltage shift, and "hump" appearance. Finite element analysis is used to analyze the strain distribution within TFT structure. Degradation approximately follows a linear trend with the number of bending cycles, and with the strain caused by the bending stress.

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来源期刊

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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