新型宽有源通道大功率超发光二极管

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624174

Yu. O. Kostin, A. A. Lobintsov, S. Yakubovich

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引用次数: 0

摘要

研究了两种基于DQW (InGa)As/(GaAl)As/GaAs纳米结构的超发光二极管(SLDs)，它们具有25µm宽的多模有源通道，发射波长分别为890 nm和950nm。它们确保在标准50 μ m多模光纤(MMF)下连续光功率超过100 mW。

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Novel high-power superluminescent diodes with wide active channels

Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 µm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 µm multimode fiber (MMF).

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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