采用55nm SOTB技术的低压- 204 dBc/Hz fmt 1.8-2.7 GHz LC-VCO

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226249

K. Shibata, Kyoya Takegawa, N. Matsuno, Hisayasu Sato

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引用次数: 0

摘要

一种用于物联网(IoT)的低压、低功耗、低相位噪声和宽频率调谐范围(FTR) LC-VCO已经在55nm薄埋氧化物硅(SOTB)技术中实现。它使用尾电阻配置来降低0.7-0.9 V低电源电压下的相位噪声，其中也采用了SOTB技术的后门偏置控制。设计了LC-VCO的输出幅值，使电流和电源电压对频率的敏感性降到最低。在100 kHz和1 MHz偏置频率下，相位噪声分别为- 101和- 123 dBc/Hz，功率低至0.88 mW。具有低寄生电容设计的高q LC-tank可实现40.7%的宽FTR，以及出色的FTR (fft)为204 dBc/Hz的品质因数。

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A Low-Voltage −204 dBc/Hz FoMT 1.8-2.7 GHz LC-VCO using 55nm SOTB Technology

A low-voltage, low-power, low-phase-noise, and wide-frequency-tuning-range (FTR) LC-VCO for Internet of Things (IoT) has been implemented in the 55nm Silicon on Thin Buried Oxide (SOTB) technology. It uses a tail resistor configuration to reduce phase noise with a low supply voltage of 0.7-0.9 V, where a back-gate bias control of the SOTB technology is also employed. An output amplitude of the LC-VCO is designed so as to minimize frequency sensitivity for both current and supply voltage. These lead to a low phase noise of −101 and −123 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively, with a low power of 0.88 mW. A high-Q LC-tank with low parasitic capacitance design enables a wide FTR of 40.7%, and an excellent figure-of-merit with the FTR (FoMT) of-204 dBc/Hz.

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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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