AlGaN太阳盲p-i-n光电二极管的电光特性:实验与仿真

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI:10.1109/NUSOD.2012.6316493

X. D. Wang, W. D. Hu, X. Chen, J. T. Xu, L. Wang, X. Y. Li, W. Lu

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引用次数: 3

摘要

介绍了太阳盲algan基p-i-n光电二极管的制作和建模方法。模拟的暗电流特性与实验结果吻合较好。研究发现，在Al0.45Ga0.55N吸收层截止波长对应的265nm处，可以达到0.005A/W的峰值响应度。由于n型Al0.65Ga0.35N层对强光的吸收，透射光谱下降到接近零。

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Electro-optical characteristics for AlGaN solar-blind p-i-n photodiode: Experiment and simulation

The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al0.45Ga0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense light absorption of n-type Al0.65Ga0.35N layer.

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来源期刊

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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