一种基于GaN的场效应肖特基势垒二极管，具有极低的导通电压

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240038

S. Yoshida, N. Ikeda, J. Li, T. Wada, H. Takehara

{"title":"一种基于GaN的场效应肖特基势垒二极管，具有极低的导通电压","authors":"S. Yoshida, N. Ikeda, J. Li, T. Wada, H. Takehara","doi":"10.1109/WCT.2004.240038","DOIUrl":null,"url":null,"abstract":"We first demonstrated a new structure of GaN Schottky diode, with dual Schottky structures. That is, a field effect Schottky barrier diode (FESBD) was fabricated. The purpose of this diode was to lower the on-state voltage and to maintain a high reverse breakdown voltage. This diode was fabricated using an AlGaN/GaN heterojunction and a selective area growth (SAG) technique. We obtained an on-state voltage below 0.1 V, using a vertical type FESBD and the breakdown voltage was over 400 V using a planar type FESBD.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A new GaN based field effect Schottky barrier diode with a very low on-voltage operation\",\"authors\":\"S. Yoshida, N. Ikeda, J. Li, T. Wada, H. Takehara\",\"doi\":\"10.1109/WCT.2004.240038\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We first demonstrated a new structure of GaN Schottky diode, with dual Schottky structures. That is, a field effect Schottky barrier diode (FESBD) was fabricated. The purpose of this diode was to lower the on-state voltage and to maintain a high reverse breakdown voltage. This diode was fabricated using an AlGaN/GaN heterojunction and a selective area growth (SAG) technique. We obtained an on-state voltage below 0.1 V, using a vertical type FESBD and the breakdown voltage was over 400 V using a planar type FESBD.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.240038\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

我们首先展示了一种具有双肖特基结构的GaN肖特基二极管的新结构。即制备了场效应肖特基势垒二极管(FESBD)。该二极管的目的是降低导通电压并保持高的反向击穿电压。该二极管是利用AlGaN/GaN异质结和选择性面积生长(SAG)技术制备的。我们使用垂直型FESBD获得了低于0.1 V的导通电压，使用平面型FESBD获得了超过400 V的击穿电压。

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A new GaN based field effect Schottky barrier diode with a very low on-voltage operation

We first demonstrated a new structure of GaN Schottky diode, with dual Schottky structures. That is, a field effect Schottky barrier diode (FESBD) was fabricated. The purpose of this diode was to lower the on-state voltage and to maintain a high reverse breakdown voltage. This diode was fabricated using an AlGaN/GaN heterojunction and a selective area growth (SAG) technique. We obtained an on-state voltage below 0.1 V, using a vertical type FESBD and the breakdown voltage was over 400 V using a planar type FESBD.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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