{"title":"具有超浅体区的平面SONOS栅极功率MOSFET","authors":"Xianda Zhou, Hao Feng, J. Sin","doi":"10.1109/ISPSD.2012.6229031","DOIUrl":null,"url":null,"abstract":"In this paper, a planar silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) with a 0.3 μm ultra-shallow heavily doped p-body region is presented. The ultra-shallow body provides a much reduced parasitic JFET resistance, resulting in a low specific on-resistance of 18 mΩ·mm2 for a planar device. At the same time, no punch-through problem is caused by the ultra-shallow body, and the avalanche breakdown voltage of the device is 29.5 V. The product of the on-resistance and gate charge of the ultra-shallow body SG-MOSFET is 43 mΩ·nC at VGS = 4.5 V. The non-optimized performance obtained for this structure is comparable to that of trench power MOSFETs fabricated using more advanced technologies.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Planar SONOS gate power MOSFET with an ultra-shallow body region\",\"authors\":\"Xianda Zhou, Hao Feng, J. Sin\",\"doi\":\"10.1109/ISPSD.2012.6229031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a planar silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) with a 0.3 μm ultra-shallow heavily doped p-body region is presented. The ultra-shallow body provides a much reduced parasitic JFET resistance, resulting in a low specific on-resistance of 18 mΩ·mm2 for a planar device. At the same time, no punch-through problem is caused by the ultra-shallow body, and the avalanche breakdown voltage of the device is 29.5 V. The product of the on-resistance and gate charge of the ultra-shallow body SG-MOSFET is 43 mΩ·nC at VGS = 4.5 V. The non-optimized performance obtained for this structure is comparable to that of trench power MOSFETs fabricated using more advanced technologies.\",\"PeriodicalId\":371298,\"journal\":{\"name\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2012.6229031\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Planar SONOS gate power MOSFET with an ultra-shallow body region
In this paper, a planar silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) with a 0.3 μm ultra-shallow heavily doped p-body region is presented. The ultra-shallow body provides a much reduced parasitic JFET resistance, resulting in a low specific on-resistance of 18 mΩ·mm2 for a planar device. At the same time, no punch-through problem is caused by the ultra-shallow body, and the avalanche breakdown voltage of the device is 29.5 V. The product of the on-resistance and gate charge of the ultra-shallow body SG-MOSFET is 43 mΩ·nC at VGS = 4.5 V. The non-optimized performance obtained for this structure is comparable to that of trench power MOSFETs fabricated using more advanced technologies.
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