W. Brockherde, A. Bußmann, Christian Nitta, B. Hosticka, R. Wertheimer
{"title":"高灵敏度、高动态范围768 /倍/ 576像素CMOS图像传感器","authors":"W. Brockherde, A. Bußmann, Christian Nitta, B. Hosticka, R. Wertheimer","doi":"10.1109/ESSCIR.2004.1356705","DOIUrl":null,"url":null,"abstract":"This communication describes a high-sensitivity, high dynamic range 768/spl times/576 pixel image sensor fabricated in 0.5 /spl mu/m standard CMOS technology and its design. The pixel pitch is 10 /spl mu/m/spl times/10 /spl mu/m with a fill factor of 50% while the chip area is 90 mm/sup 2/. The dynamic range is 118 dB while the measured noise equivalent exposure is 66 pJ/cm/sup 2/ at 635 nm wavelength. This yields a sensitivity of just 4.9 ml/spl times/ at 20 ms integration time which makes it also suitable for night vision applications.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-sensitivity, high-dynamic range 768 /spl times/ 576 pixel CMOS image sensor\",\"authors\":\"W. Brockherde, A. Bußmann, Christian Nitta, B. Hosticka, R. Wertheimer\",\"doi\":\"10.1109/ESSCIR.2004.1356705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This communication describes a high-sensitivity, high dynamic range 768/spl times/576 pixel image sensor fabricated in 0.5 /spl mu/m standard CMOS technology and its design. The pixel pitch is 10 /spl mu/m/spl times/10 /spl mu/m with a fill factor of 50% while the chip area is 90 mm/sup 2/. The dynamic range is 118 dB while the measured noise equivalent exposure is 66 pJ/cm/sup 2/ at 635 nm wavelength. This yields a sensitivity of just 4.9 ml/spl times/ at 20 ms integration time which makes it also suitable for night vision applications.\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This communication describes a high-sensitivity, high dynamic range 768/spl times/576 pixel image sensor fabricated in 0.5 /spl mu/m standard CMOS technology and its design. The pixel pitch is 10 /spl mu/m/spl times/10 /spl mu/m with a fill factor of 50% while the chip area is 90 mm/sup 2/. The dynamic range is 118 dB while the measured noise equivalent exposure is 66 pJ/cm/sup 2/ at 635 nm wavelength. This yields a sensitivity of just 4.9 ml/spl times/ at 20 ms integration time which makes it also suitable for night vision applications.
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