一种新型高击穿电压悬浮金属环垂直GaN肖特基势垒二极管

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240037

Seung-Chul Lee, J. Her, Soo-Seong Kim, M. Ha, K. Seo, Yearn-Ik Choi, M. Han

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引用次数: 15

摘要

描述了一种采用浮动金属环作为边缘终端的垂直GaN肖特基势垒二极管(SBD)。击穿电压比在大块GaN衬底上制造的没有任何终端的器件大。制备的GaN SBD具有353 V的高击穿电压和28 ns的快速反向恢复特性。无端接设备的击穿电压为159v。应该注意的是，建议的设备不需要任何额外的工艺。

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A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage

A vertical GaN Schottky barrier diode (SBD) employing a floating metal ring as an edge termination is described. The breakdown voltage is larger than a device without any termination that has been fabricated on a bulk GaN substrate. Fabricated GaN SBD exhibits a high breakdown voltage of 353 V and very fast reverse recovery characteristics of 28 ns. The breakdown voltage of a device without termination is 159 V. It should be noted that the proposed device does not require any additional processes.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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