CMOS有源滤波器与pHEMT有源滤波器的比较研究

Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014) Pub Date : 2014-12-01 DOI:10.1109/MMS.2014.7088961

I. Halkhams, W. El Hamdani, S. Mazer, M. El Bekkali

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引用次数: 0

摘要

本文对一种基于有源电感的有源滤波器进行了比较研究。有源滤波器设计分为两种技术;ams_simmosfet和UMS_pHEMT。讨论了滤波器的输入阻抗、功率增益和品质因数等主要特性，并根据通道迁移率、截止频率和各自的态密度综合了两种技术的高频性能。我们表明，滤波器可以非常有选择性，并且每种技术都在特定的频带上工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative study between CMOS and pHEMT active filter

This paper relates a comparative study of an active filter based on active inductor. The active filter was designed in two technologies; AMS_SiMOSFET and UMS_pHEMT. Main characteristics of the filters such as input impedance, power gain and quality factor are discussed and a synthesis is given on high frequency performance of the two technologies based on channel mobility, CutOff frequency and density of states of each. We show that the filters can be very selective and that every technology operates at a special frequency band.

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Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)

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