基于肖特基二极管嵌入梯度SiGe波导的宽带中红外集成电光调制器

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9674022

M. Montesinos-Ballester, L. Deniel, Natnicha Koompai, T. Nguyen, J. Frigerio, A. Ballabio, V. Falcone, X. Roux, C. Alonso‐Ramos, L. Vivien, A. Bousseksou, G. Isella, D. Marris-Morini

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引用次数: 0

摘要

我们提出了一种集成电光调制器，该调制器基于嵌入在渐变折射率SiGe波导中的肖特基二极管，工作在6.4至10.7 μ m波长的宽中红外范围内。报道了1.3 dB的吸收变化，这已经与片上同步检测实验兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Broadband mid-infrared integrated electro-optic modulator based on a Schottky diode embedded in a graded SiGe waveguide

We present an integrated electro-optical modulator based on a Schottky diode embedded in a graded-index SiGe waveguide, operating in a wide mid-IR range from 6.4 to 10.7 µm wavelength. A 1.3 dB absorption variation is reported, which is already compatible with onchip synchronous detection experiments.

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来源期刊

2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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