{"title":"一种采用标准CMOS技术的硅发光器件","authors":"Hongda Chen, Zenghui Sun, Hai-jun Liu, Peng Gao","doi":"10.1109/GROUP4.2004.1416662","DOIUrl":null,"url":null,"abstract":"A silicon light emitting device is designed and simulated. It is fabricated in 0.6 /spl mu/m standard CMOS technology. The device can give more than 1 /spl mu/W optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V. The external electrical-optical conversion efficiency is more than 10/sup -6/. The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A silicon light emitting devices in standard CMOS technology\",\"authors\":\"Hongda Chen, Zenghui Sun, Hai-jun Liu, Peng Gao\",\"doi\":\"10.1109/GROUP4.2004.1416662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon light emitting device is designed and simulated. It is fabricated in 0.6 /spl mu/m standard CMOS technology. The device can give more than 1 /spl mu/W optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V. The external electrical-optical conversion efficiency is more than 10/sup -6/. The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A silicon light emitting devices in standard CMOS technology
A silicon light emitting device is designed and simulated. It is fabricated in 0.6 /spl mu/m standard CMOS technology. The device can give more than 1 /spl mu/W optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V. The external electrical-optical conversion efficiency is more than 10/sup -6/. The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.
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