无容量大容量存储器:可伸缩性和信号影响

G. Gouya, P. Malinge, B. Garni, F. Genevaux, R. Ferrant, S. Puget, V. Gravoulet, O. Bonnaud
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引用次数: 3

摘要

1晶体管浮动体(1TFB)存储器为嵌入式存储器提供了一种可能的解决方案,因为它看起来可以扩展,并且可以通过标准处理来实现。本研究探讨1TFB记忆体的讯号极限随著技术的扩展。结果表明,尽管信号的δ avth随缩放几乎保持不变,但由于存储电荷的数量减少,存储细胞变得容易受到干扰。此外,晶体管失配随比例的增加而增加,从而限制了传统传感方法正确读取存储器的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1T-capacitorless bulk memory: Scalability and signal impact
The 1-transistor floating body (1TFB) memory presents a possible solution for embedded memories, as it appears to scale, and does so with standard processing. This study investigates the signal limits of 1TFB memory as technology scales. It shows that although the signal DeltaVth remains nearly constant with scaling, the memory cells become susceptible to disturbance because the amount of stored charge decreases. In addition, the transistor mismatch increases with scaling, thus limiting the ability of conventional sensing methods to correctly read the memory.
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