分栅MOSFET(SG-MOSFET)在3.3kV时的限制

2021 International Conference on Electronics, Information, and Communication (ICEIC) Pub Date : 2021-01-31 DOI:10.1109/ICEIC51217.2021.9369734

Kyuhyun Cha, Jongwoong Yoon, Jinhee Cheon, Kwangsoo Kim

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引用次数: 1

摘要

分栅MOSFET (SG-MOSFET)是降低栅极漏极电容(CGD)的有效方法之一。然而，3.3 kV SiC MOSFET的适用性尚未得到研究。本文通过TCAD仿真验证了3.3 kV 4H-SiC SG-MOSFET与传统MOSFET (C-MOSFET)的对比研究。结果表明，两种结构的直流性能值(DC- fom)分别为747.33 MW/cm2和605.39 MW/cm2，高频性能值(HF-FOM)分别为754.66 mΩ·pF和574.5 mΩ·pF。,分别。由于分栅结构，HF-FOM提高了24%，而DC-FOM降低了19%。此外，它不满足栅氧化可靠性，并遭受严重的DIBL效应。因此，与DC-FOM相比，SG-MOSFET在改善HF-FOM方面效果较差，并且会导致3.3 kV的可靠性问题。

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The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV

Split Gate MOSFET (SG-MOSFET) is one of the effective way to lower the gate-drain capacitance (CGD). However, the applicability of 3.3 kV SiC MOSFET has not been studied yet. In this paper, comparative study of 3.3 kV 4H-SiC SG-MOSFET was confirmed by TCAD simulation compared with conventional MOSFET (C-MOSFET). As a result, the DC figure of merit (DC-FOM) of the two structures are 747.33 MW/cm2 and 605.39 MW/cm2, respectively, and the high frequency figure of merit (HF-FOM) are 754.66 mΩ·pF and 574.5 mΩ·pF., respectively. Although HF-FOM improved by 24% due to the split gate structure, DC-FOM decreased by 19%. In addition, it does not satisfy the gate oxide reliability and suffered from severe DIBL effect. Therefore, the SG-MOSFET is less effective in improving HF-FOM compared to DC-FOM and causes reliability problems in the 3.3 kV.

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2021 International Conference on Electronics, Information, and Communication (ICEIC)

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