二维六方晶格拓扑绝缘体中光激发电子的后向散射禁止输运

2019 IEEE International Conference on Telecommunications and Photonics (ICTP) Pub Date : 2019-12-01 DOI:10.1109/ICTP48844.2019.9041825

Beig Rajibul Hasan, T. Masum, Nishat Mahzabin Helaly, Anowarul Azim, Joy Sharma, Mahbub Alam

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引用次数: 0

摘要

利用非平衡格林函数(NEGF)形式和Haldane模型研究了光子相互作用下二维六方晶格拓扑绝缘体(TI)中的电子输运性质。光激发后电子在价带和导带的背散射较少。研究结果可用于纳米级光电相干电子器件的设计。

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Backscattering Prohibited Transport of Photo Excited Electrons in 2D Hexagonal Lattice Topological Insulator

Electron transport properties in 2D hexagonal lattice topological insulators (TI) under photon interaction are investigated using Non Equilibrium Green's Function (NEGF) formalism and Haldane model. Back scattering less transport of electrons in valence band and conduction band (after photo-excitation) is observed. The result of this research can be utilized for design of nano-scale optoelectronic coherent electron devices.

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2019 IEEE International Conference on Telecommunications and Photonics (ICTP)

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