双向升压变换器中新型TO-247 IGBT封装SiC二极管与SiC MOSFET的比较

2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES) Pub Date : 2020-09-01 DOI:10.1109/IESES45645.2020.9210699

S. Rizzo, G. Scelba, G. Susinni, Domenico Paternostro, R. Scollo

{"title":"双向升压变换器中新型TO-247 IGBT封装SiC二极管与SiC MOSFET的比较","authors":"S. Rizzo, G. Scelba, G. Susinni, Domenico Paternostro, R. Scollo","doi":"10.1109/IESES45645.2020.9210699","DOIUrl":null,"url":null,"abstract":"Bidirectional DC/DC converters are very useful in different sustainable energy sectors, such as renewable energies, and electric mobility. In the last application, automotive-grade power devices are required because of the high reliability requested to the system. Recently, the first automotive-grade TO-247 IGBT copacked with SiC diode has been manufactured. In this work its performance has been firstly investigated in a bidirectional boost converter. A comparison with SiC MOSFET has been also carried out in order to provide useful guidelines in the design of this converter.","PeriodicalId":262855,"journal":{"name":"2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)","volume":"36 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison between innovative TO-247 IGBT copacked with SiC diode and SiC MOSFET in bidirectional boost converter\",\"authors\":\"S. Rizzo, G. Scelba, G. Susinni, Domenico Paternostro, R. Scollo\",\"doi\":\"10.1109/IESES45645.2020.9210699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bidirectional DC/DC converters are very useful in different sustainable energy sectors, such as renewable energies, and electric mobility. In the last application, automotive-grade power devices are required because of the high reliability requested to the system. Recently, the first automotive-grade TO-247 IGBT copacked with SiC diode has been manufactured. In this work its performance has been firstly investigated in a bidirectional boost converter. A comparison with SiC MOSFET has been also carried out in order to provide useful guidelines in the design of this converter.\",\"PeriodicalId\":262855,\"journal\":{\"name\":\"2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)\",\"volume\":\"36 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IESES45645.2020.9210699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IESES45645.2020.9210699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

双向DC/DC转换器在不同的可持续能源领域非常有用，例如可再生能源和电动汽车。在最后的应用中，由于对系统的可靠性要求很高，需要汽车级的电源器件。最近，第一个汽车级封装SiC二极管的TO-247 IGBT已经制造出来。本文首次在双向升压变换器中对其性能进行了研究。为了对该变换器的设计提供有用的指导，还与SiC MOSFET进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparison between innovative TO-247 IGBT copacked with SiC diode and SiC MOSFET in bidirectional boost converter

Bidirectional DC/DC converters are very useful in different sustainable energy sectors, such as renewable energies, and electric mobility. In the last application, automotive-grade power devices are required because of the high reliability requested to the system. Recently, the first automotive-grade TO-247 IGBT copacked with SiC diode has been manufactured. In this work its performance has been firstly investigated in a bidirectional boost converter. A comparison with SiC MOSFET has been also carried out in order to provide useful guidelines in the design of this converter.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)

自引率

0.00%

发文量