直接使用MESFET的物理模型，在非线性CAD中

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188319

P.J.C. Rodrigues, Michael J. Howes, J. R. Richardson

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引用次数: 4

摘要

作者提出了一种CAD(计算机辅助设计)工具，该工具结合了一种新颖的准二维MESFET物理模型和有效的非线性电路分析技术。使用该工具，器件技术参数(尺寸、掺杂剖面等)可直接与电性能相关，因此可用于非线性电路良率的研究和优化。模拟结果与实测结果非常吻合。

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Direct use of a MESFET physical model, in nonlinear CAD

The authors present a CAD (computer-aided design) tool which combines a novel quasi-two-dimensional MESFET physical model with an efficient nonlinear circuit analysis technique. Device technological parameters (dimensions, doping profile, etc.) can be directly related to electrical performance with this tool, which can therefore be used in nonlinear circuit yield study and optimization. An excellent agreement between simulated and measured results was obtained.<>

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1992 IEEE Microwave Symposium Digest MTT-S

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