高摩尔分数in的变质HEMT结构的低温光致发光和光反射率

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW) Pub Date : 2015-05-07 DOI:10.1109/EICONRUSNW.2015.7102227

D. S. Romanovskiy, A. Solomonov, S. Tarasov, I. Lamkin, G. Galiev, S. Pushkarev

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引用次数: 0

摘要

研究了几种具有In0.7Ga0.3As活性区和不同缓冲层设计的变质HEMT (MHEMT)异质结构的低温光致发光和光反射率。结果表明，具有阶梯级变质缓冲层的结构质量较好。结果表明，变质缓冲液中不匹配的超晶格会影响光致发光光谱的半宽度。讨论了光致发光谱线的可能归属及其热行为。光反射光谱在能量区显示出许多特征，其中没有观察到PL特征。

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Low temperature photoluminescence and photoreflectance of metamorphic HEMT structures with high mole fraction of in

Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT (MHEMT) heterostructures with the In0.7Ga0.3As active regions and different buffer layer designs. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence spectral lines and their thermal behaviour are critically discussed. The photoreflectance spectrum shows a lot of features in energy region, where none of PL features observed.

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2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

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