基于分布式R-fold模块冗余的大缺陷密度下纳米电子系统可靠性优化

M. Stanisavljevic, A. Schmid, Y. Leblebici
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引用次数: 12

摘要

据作者所知,首次从可靠性的角度对具有分布式选民的R-fold模冗余进行了理论分析——分布式R-fold模冗余。在对未来纳米器件中预期的大规模缺陷密度的阻力方面,将该技术与具有单投票点的R-fold模块冗余、级联R-fold模块冗余和NAND多路复用进行了比较。首次在大型系统的背景下,对分布式R-fold模块化冗余技术进行了最优分区大小分析和冗余优化。提出了不同容错技术在缺陷密度下的最佳应用窗口,作为在可靠性和功率/面积之间寻找最佳设计平衡点的一种方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of Nanoelectronic Systems Reliability Under Massive Defect Density Using Distributed R-fold Modular Redundancy (DRMR)
The theoretical analysis of R-fold modular redundancy with distributed voters -- distributed R-fold modular redundancy, in terms of reliability is presented for the first time to the best of author's knowledge. This technique is compared in terms of resistance to massive levels of defect density expected in future nano-devices to R-fold modular redundancy with a single voter, cascaded R-fold modular redundancy and NAND multiplexing. Optimal partition size analysis and redundancy optimization of distributed R-fold modular redundancy technique has been performed for the first time in the context of a large-scale system. The optimal window of application of different fault-tolerant techniques with respect to defect density is presented as a way to find the optimum design trade-off between the reliability and power/area.
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