{"title":"用于甚高频压控振荡器的温度补偿ZnO/SiO2/Si薄膜谐振器","authors":"Y. Miyasaka, S. Hoshino, S. Takahashi","doi":"10.1109/ULTSYM.1985.198530","DOIUrl":null,"url":null,"abstract":"A new temperature compensated thin film resonator, consisting of a ZnO/SiOz/Si triple layer membrane, has been developed for application in a VHF voltage controlled oscillator (VCO). A t a 150 to 170 MI-Iz frequency range, resonators having desirable characteristics, such a s 40 ohms or less resonance resistance, 5 ppml\"C or less temperature coefficient and 70 to 90 capacitance ratio, have been realized. A Colpitts VCO was constructed for use a t 160 hlIIz, using the ZnOISiOz/Si resonator and a varactor diode. A 340 ppm frequency deviation has been obtained versus a control voltage change from 0 to 4 V: which is in good agreement with the equivalent circuit analysis.","PeriodicalId":240321,"journal":{"name":"IEEE 1985 Ultrasonics Symposium","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Temperature Compensated ZnO/SiO2/Si Thin Film Resonator for VHF Voltage Controlled Oscillator\",\"authors\":\"Y. Miyasaka, S. Hoshino, S. Takahashi\",\"doi\":\"10.1109/ULTSYM.1985.198530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new temperature compensated thin film resonator, consisting of a ZnO/SiOz/Si triple layer membrane, has been developed for application in a VHF voltage controlled oscillator (VCO). A t a 150 to 170 MI-Iz frequency range, resonators having desirable characteristics, such a s 40 ohms or less resonance resistance, 5 ppml\\\"C or less temperature coefficient and 70 to 90 capacitance ratio, have been realized. A Colpitts VCO was constructed for use a t 160 hlIIz, using the ZnOISiOz/Si resonator and a varactor diode. A 340 ppm frequency deviation has been obtained versus a control voltage change from 0 to 4 V: which is in good agreement with the equivalent circuit analysis.\",\"PeriodicalId\":240321,\"journal\":{\"name\":\"IEEE 1985 Ultrasonics Symposium\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1985 Ultrasonics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.1985.198530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1985 Ultrasonics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.1985.198530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature Compensated ZnO/SiO2/Si Thin Film Resonator for VHF Voltage Controlled Oscillator
A new temperature compensated thin film resonator, consisting of a ZnO/SiOz/Si triple layer membrane, has been developed for application in a VHF voltage controlled oscillator (VCO). A t a 150 to 170 MI-Iz frequency range, resonators having desirable characteristics, such a s 40 ohms or less resonance resistance, 5 ppml"C or less temperature coefficient and 70 to 90 capacitance ratio, have been realized. A Colpitts VCO was constructed for use a t 160 hlIIz, using the ZnOISiOz/Si resonator and a varactor diode. A 340 ppm frequency deviation has been obtained versus a control voltage change from 0 to 4 V: which is in good agreement with the equivalent circuit analysis.
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