毫米波频率下多指InP DHBT器件的大信号建模

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI:10.1109/INMMIC.2017.7927301

T. Johansen, V. Midili, M. Squartecchia, V. Zhurbenko, V. Nodjiadjim, J. Dupuy, M. Riet, A. Konczykowska

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引用次数: 10

摘要

针对采用磷化铟(InP)双异质结双极晶体管(DHBT)工艺制造的多指器件，提出了一种大信号建模方法。该方法利用嵌入在多端口寄生网络中的单元手指设备模型。单位手指模型基于改进的UCSD HBT模型配方，避免了在其他基于III-V的HBT模型中发现的固有集电极区域错误的RciCbci传递时间贡献。通过热耦合网络对手指间的相互加热进行建模，并从电热仿真中提取参数。通过在84 GHz功率放大器上使用堆叠配置的四指InP dhbt进行测量，验证了多指建模方法。

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Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.

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2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)

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