一种基于亚太赫兹频段低节点质量因数晶体管的低群延迟变化宽带多级放大器

2021 IEEE MTT-S International Microwave and RF Conference (IMARC) Pub Date : 2021-12-17 DOI:10.1109/imarc49196.2021.9714671

Kenta Sahara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda

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引用次数: 2

摘要

我们提出了一种在亚太赫兹范围内增加多级放大器带宽并减小群延迟变化的简单方法。方法是使用低节点质量因数的晶体管[3]作为放大器。为了验证所提出的方法，使用$0.13\mu\ mathm {m}$ SiGe BiCMOS工艺制作了一个四级放大器。该放大器的最大增益为5.42dB, 3dB带宽超过30GHz, 12.8ps。

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A Wideband Multi-Stage Amplifier with Low Group-Delay Variation Using Transistors with Low Nodal Quality Factors in Sub-Terahertz Band

We propose a simple way to increase the bandwidth and reduce the group-delay variation of a multi-stage amplifier in the sub-terahertz range. The method is to use transistors with low nodal quality factors [3] for the amplifier. To verify the proposed method, a four-stage amplifier is fabricated using a $0.13\mu\mathrm{m}$ SiGe BiCMOS process. The amplifier has the maximum gain of 5.42dB, the 3dB bandwidth of over 30GHz, 12.8ps.

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2021 IEEE MTT-S International Microwave and RF Conference (IMARC)

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