S. Y. Ku, T. Lo, Y. Shih, C. Shi, C.H. Wang, Y.J. Yu
{"title":"防止簇状缺陷的金属前清洁优化","authors":"S. Y. Ku, T. Lo, Y. Shih, C. Shi, C.H. Wang, Y.J. Yu","doi":"10.1109/ISSM.2001.963024","DOIUrl":null,"url":null,"abstract":"Pre-metal clean is a critical procedure before the metal loop in the salicide process. Surface defects such as the surface native oxide or any other contamination may result in a poor adhesion of Ti/TiN, for example, and hence the poor salicide formation. HF treatment with IPA dry is a widely used methodology for surface defect removal, and results in a clean surface which is water spot free and has less chemical oxide. However, a cluster type defect is an accompaniment of this treatment in the salicide process. The aim of this work is to provide an optimized cleaning procedure at pre-metal clean for mass production.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pre-metal clean optimization for cluster defect prevention\",\"authors\":\"S. Y. Ku, T. Lo, Y. Shih, C. Shi, C.H. Wang, Y.J. Yu\",\"doi\":\"10.1109/ISSM.2001.963024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pre-metal clean is a critical procedure before the metal loop in the salicide process. Surface defects such as the surface native oxide or any other contamination may result in a poor adhesion of Ti/TiN, for example, and hence the poor salicide formation. HF treatment with IPA dry is a widely used methodology for surface defect removal, and results in a clean surface which is water spot free and has less chemical oxide. However, a cluster type defect is an accompaniment of this treatment in the salicide process. The aim of this work is to provide an optimized cleaning procedure at pre-metal clean for mass production.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.963024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.963024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pre-metal clean optimization for cluster defect prevention
Pre-metal clean is a critical procedure before the metal loop in the salicide process. Surface defects such as the surface native oxide or any other contamination may result in a poor adhesion of Ti/TiN, for example, and hence the poor salicide formation. HF treatment with IPA dry is a widely used methodology for surface defect removal, and results in a clean surface which is water spot free and has less chemical oxide. However, a cluster type defect is an accompaniment of this treatment in the salicide process. The aim of this work is to provide an optimized cleaning procedure at pre-metal clean for mass production.