45nm SOI中具有可变弹性的530mV 10通道SIMD处理器

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI:10.1109/ISSCC.2012.6177105

R. Pawlowski, Evgeni Krimer, Joseph Crop, J. Postman, N. M. Madani, M. Erez, P. Chiang

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引用次数: 31

摘要

与名义上的超阈值运算相比，近阈值运算显示出更高的能源效率[1,2]。两个关键瓶颈阻碍了低vdd操作的主流采用:降低的逻辑延迟导致吞吐量明显低于超阈值，以及由于对过程和动态变化的敏感性增加而导致的过度不可预测的延迟变化。

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A 530mV 10-lane SIMD processor with variation resiliency in 45nm SOI

Near-threshold computing exhibits improved energy efficiency compared to nominal super-threshold operation [1, 2]. Two critical bottlenecks prevent mainstream adoption of low-VDD operation: degraded logic delay resulting in significantly lower throughput than at super-threshold, and excessive, unpredictable delay variation caused by increased sensitivity to process and dynamic variations.

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2012 IEEE International Solid-State Circuits Conference

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