不同技术节点下swcnts束互连的时延分析

Shouvik Musavvir, Prattay Chowdhury, S. M. Mominuzzaman
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引用次数: 2

摘要

本文从工艺参数的角度分析了单壁碳纳米管束互连中产生的延迟,并与铜线进行了比较。考虑到实际的限制条件,计算了电路参数,建立了swcnts和铜的等效RLC模型。该模型通过改变束密度和接触电阻来计算局部、中间和全局互连的延迟。分析了不同工艺节点下电路参数的相对影响。文中还指出了影响性能的最重要参数。同样,建立了铜互连的等效电路模型,并确定了时延。铜与碳纳米管互连的比较表明,碳纳米管的局部长度延迟可达铜的2倍。碳纳米管在16nm、22nm和45nm的互连延迟在中间范围内小于铜。对于全局互连,swcnts的延迟比铜线的延迟小0.3-0.5倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Delay analysis of SWCNT bundle interconnect for different technology nodes
In this paper the delay occurring in SWCNT bundle interconnect is analysed based on process related parameters and it is also compared to copper wire. The circuit parameters are calculated to develop an equivalent RLC model for both SWCNT and copper considering the practical constraints. This model is used to calculate the delay for local, intermediate and global interconnects by varying the bundle density and contact resistance. The relative effect of circuit parameters is analysed for different technology nodes. This paper also points out the most important parameter affecting the performance. Similarly, the equivalent circuit model for copper interconnect is developed and the delay is determined. The comparison of copper and CNT interconnect shows that the delay for CNT can be up to 2 times more than copper in local length. The delay of CNT interconnects in 16nm, 22nm and 45nm is less than copper in intermediate range. For global interconnects, the SWCNT delay is 0.3–0.5 times less than the delay of copper wire.
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