低钾薄膜孔隙表征的三维透射电镜立体观测技术

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219724

S. Ogawa, J. Shimanuki, M. Shimada, T. Nasuno, Y. Inoue, H. Mori

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引用次数: 0

摘要

首次应用透射电子显微镜(TEM)对低钾薄膜中的孔隙进行了三维表征。为了获得孔隙的三维形状，在立体模式下进行了透射电镜观测。三维透射电镜观察结果表明，孔隙不是球形的，而是随机的;孔隙不是均匀存在的，而是不均匀分布的;经过适当的商业固化处理后，孔隙往往集中在所检查的SiC/低k薄膜堆的界面区域。在400℃的退火温度下，低k薄膜中出现了气孔迁移现象。

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3-Dimentional TEM stereo observation technology for characterization of pores in low-k film

Transmission Electron Microscopy (TEM) has been applied to characterize pores in low-k films 3-dimentionally for the first time. To obtain the 3-dimentional shape of pores, TEM observations were operated in a stereo mode. The 3-dimentional TEM observations results showed that pores are not spherical but random in the shape and that pores do not exist uniformly but unevenly distribute in the low-k films and they tend to concentrate at the interface areas in examined SiC/low-k films stacks after commercially adequate cure treatments. The pores migrate in the low-k films during anneal at process temperatures such as 400 degrees C.

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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