真空合成掺锗溶胶-凝胶非晶SiO/ sub2 /的光学性质和光敏性

S. Agnello, R. Boscaino, F. La Mattina, S. Grandi, A. Magistris
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引用次数: 0

摘要

本文报道了溶胶-凝胶掺锗非晶SiO/ sub2 /中伽马射线辐照效应的光学和电子顺磁共振研究。所研究的材料的ge掺杂水平高达10/sup / mol / part / million,并通过两种不同的途径致密化:O/sub - 2/+N/sub - 2/或真空。所得结果证明辐照对基体部位产生顺磁缺陷。此外,两种致密化方法的比较表明,真空气氛具有更高的辐射敏感性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical properties and photosensitivity of vacuum synthesized Ge-doped sol-gel amorphous SiO/sub 2/
We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in sol-gel Ge-doped amorphous SiO/sub 2/. The studied materials have Ge-doping levels up to 10/sup 4/ molar part per million and were densified by two routes differing for the atmosphere: O/sub 2/+N/sub 2/ or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
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