应变和晶体取向对量子阱器件非线性的影响

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.571951

A. Smirl, E. Towe

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引用次数: 0

摘要

作者讨论了他们在研究晶体取向和应变对III-V型半导体化合物的非线性和电光性质的影响方面的进展，并举例说明了如何利用这些取向相关的性质来设计新型光学器件。

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The effects of strain and crystallographic orientation on nonlinearities in quantum well devices

The author discusses their progress in investigating the influences of crystallographic orientation and of strain on the nonlinear and electro-optical properties of III-V semiconductor compounds, and they present examples of how these orientation-dependent properties can be used to design novel optical devices.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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