基于垂直x射线光导门控A - igzo TFT的直接转换x射线探测器

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608109

Yangbing Xu, Jun Chen, Kai Wang

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引用次数: 0

摘要

我们提出了一种新型的直接x射线探测器，结合了垂直x射线光导体和读出a- igzo TFT来形成有源像素传感器。TCAD仿真结果表明，该垂直光导门控TFT的阈值电压灵敏度参数为γ=−1.42。随后的实验结果表明，γ值可达- 2.11。再加上a-IGZO TFT通常具有的高迁移率和低暗电流，所提出的探测器可以潜在地实现高分辨率，高灵敏度和低噪声的动态x射线成像。

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A Direct-Conversion X-ray Detector Based on A Vertical X-ray Photoconductor-Gated a-IGZO TFT

We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.

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2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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