HgCdTe光电二极管正偏区电流-电压特性建模

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI:10.1109/NUSOD.2012.6316486

Yang Li, Z. Ye, Chun Lin, Xiao-ning Hu, R. Ding, Li He

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引用次数: 0

摘要

基于扩散和复合电流、金属-半导体(M-S)接触和恒定串联电阻等机制，对HgCdTe光电二极管在正向偏置区域的电流-电压(I-V)特性进行了建模。此外，还开发了一种数据处理方法，从测量的I-V曲线中获得有价值的物理参数。通过对HgCdTe光电二极管器件参数的拟合结果，验证了该模型和算法的有效性和可行性。

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Modeling on current-voltage characteristics of HgCdTe photodiodes in forward bias region

Current-voltage (I-V) characteristics of HgCdTe photodiodes in the forward bias region have been modeled on account of mechanisms including diffusion and recombination currents, metal-semiconductor (M-S) contact and constant series resistance. Moreover, a data processing approach has been developed to obtain valuable physical parameters from measured I-V curves. This model and algorithm have also been verified to be available and promising by the fitting results on device parameters of HgCdTe photodiodes.

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来源期刊

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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