用于驱动数字集成电路中大容性负载的高速CMOS缓冲器

R. Secareanu, E. Friedman
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引用次数: 7

摘要

本文介绍了一种高速高驱动(HD) CMOS缓冲器,它是目前广泛使用的CMOS锥形缓冲器的替代方案。本文介绍了HD缓冲器的工作原理,并与锥形缓冲器进行了比较。根据容性负载的不同,与等效的锥形缓冲器相比,HD缓冲器可以提供更高的速度(高达2.2/spl倍/)或多种速度/功率/面积权衡。时钟分配网络、大型数据总线和I/O缓冲区是这种缓冲结构的一些可能的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high speed CMOS buffer for driving large capacitive loads in digital ASICs
A High Speed High-Drive (HD) CMOS buffer is described in this paper which is an alternative to the widely used CMOS tapered buffer. The paper introduces the principle of operation of the HD buffer and compares it with a tapered buffer. Depending upon the capacitive load, the HD buffer as compared to an equivalent tapered buffer can provide increased speed (up to 2.2/spl times/) or multiple speed/power/area trade-offs. Clock distribution networks, large data buses, and I/O buffers are some possible applications of this buffer structure.
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