基于硅衬底的GaAs/AlGaAs量子阱红外光电探测器

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM) Pub Date : 2021-07-01 DOI:10.1109/SUM48717.2021.9505769

É. Rodriguez, K. Tan, Wang Chongwu, K. Lee, S. Wicaksono, C. Sirtori, S. Yoon, W. Qijie

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引用次数: 0

摘要

在AlGaAs/GaAs量子阱红外探测器有源区与Si衬底之间引入Ge缓冲层，降低了穿线位错密度。Si和GaAs衬底上的qwip具有相似的响应性和探测性。这项工作为CMOS兼容的片上中红外探测器铺平了道路。

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Si substrate based GaAs/AlGaAs quantum well infrared photodetector with Ge buffer

Ge buffer layer was introduced between the AlGaAs/GaAs quantum well infrared photodetectors active region and Si substrate, reducing threading dislocation density. The QWIPs on both Si and GaAs substrate exhibit similar responsivity, and detectivity. This work paves the way for CMOS compatible, on-chip mid-infrared detectors.

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2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

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