{"title":"大电流下基极扩展电阻的传输线模型","authors":"H. Lin, D. J. Page, J. Ostop","doi":"10.1109/IAS.1988.25127","DOIUrl":null,"url":null,"abstract":"The base resistance of a bipolar transistor at high currents has been analyzed using a transmission-line model and taking the current-crowding effect into account. A closed-form solution has been obtained and shows that the collector current dependency on V/sub B,E/ is proportional to exp(V/sub B,E//2V/sub T/). This ideology factor of 2 for collector current is usually attributed to conductivity modulation at high currents. Analysis shows that the current crowding can also contribute to the nonunity ideology factor. The analysis is in agreement with experimental results.<<ETX>>","PeriodicalId":274766,"journal":{"name":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","volume":"205 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transmission line model of base spreading resistance at high currents\",\"authors\":\"H. Lin, D. J. Page, J. Ostop\",\"doi\":\"10.1109/IAS.1988.25127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The base resistance of a bipolar transistor at high currents has been analyzed using a transmission-line model and taking the current-crowding effect into account. A closed-form solution has been obtained and shows that the collector current dependency on V/sub B,E/ is proportional to exp(V/sub B,E//2V/sub T/). This ideology factor of 2 for collector current is usually attributed to conductivity modulation at high currents. Analysis shows that the current crowding can also contribute to the nonunity ideology factor. The analysis is in agreement with experimental results.<<ETX>>\",\"PeriodicalId\":274766,\"journal\":{\"name\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"205 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1988.25127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1988.25127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transmission line model of base spreading resistance at high currents
The base resistance of a bipolar transistor at high currents has been analyzed using a transmission-line model and taking the current-crowding effect into account. A closed-form solution has been obtained and shows that the collector current dependency on V/sub B,E/ is proportional to exp(V/sub B,E//2V/sub T/). This ideology factor of 2 for collector current is usually attributed to conductivity modulation at high currents. Analysis shows that the current crowding can also contribute to the nonunity ideology factor. The analysis is in agreement with experimental results.<>