N. Shibata, K. Kanda, Toshiki Hisada, K. Isobe, Manabu Sato, Y. Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, K. Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, K. Iwasa, M. Kojima, Toshihiro Suzuki, Yuya Suzuki, S. Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, M. Miakashi, N. Kobayashi, M. Inagaki, Yuuki Matsumoto, S. Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, M. Nakagawa, M. Honma, N. Abiko, M. Koyanagi, Masahiro Yoshihara, K. Ino, M. Noguchi, T. Kamei, Yosuke Kato, S. Zaitsu, H. Nasu, Takuya Ariki, H. Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, G. Hemink, F. Moogat, Cuong Trinh, M. Higashitani, T. Pham, K. Kanazawa
{"title":"19nm 112.8mm2 64Gb多级快闪记忆体，具有400Mb/s/pin 1.8V切换模式介面","authors":"N. Shibata, K. Kanda, Toshiki Hisada, K. Isobe, Manabu Sato, Y. Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, K. Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, K. Iwasa, M. Kojima, Toshihiro Suzuki, Yuya Suzuki, S. Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, M. Miakashi, N. Kobayashi, M. Inagaki, Yuuki Matsumoto, S. Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, M. Nakagawa, M. Honma, N. Abiko, M. Koyanagi, Masahiro Yoshihara, K. Ino, M. Noguchi, T. Kamei, Yosuke Kato, S. Zaitsu, H. Nasu, Takuya Ariki, H. Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, G. Hemink, F. Moogat, Cuong Trinh, M. Higashitani, T. Pham, K. Kanazawa","doi":"10.1109/ISSCC.2012.6177073","DOIUrl":null,"url":null,"abstract":"NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is achieved by 4b/cell [1] or 3b/cell [2]. The other is focusing on high performance and high reliability. To meet both demands, we develop a 19nm 112.8mm2 64Gb 2b/cell NAND flash memory with the smallest die size ever reported. 15MB/s programming throughput and 400Mb/s/pin 1.8V Toggle Mode interface [3] are achieved for the first time. Die Micrograph and features are shown in Figure 25.1.1.","PeriodicalId":255282,"journal":{"name":"2012 IEEE International Solid-State Circuits Conference","volume":"271 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface\",\"authors\":\"N. Shibata, K. Kanda, Toshiki Hisada, K. Isobe, Manabu Sato, Y. Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, K. Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, K. Iwasa, M. Kojima, Toshihiro Suzuki, Yuya Suzuki, S. Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, M. Miakashi, N. Kobayashi, M. Inagaki, Yuuki Matsumoto, S. Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, M. Nakagawa, M. Honma, N. Abiko, M. Koyanagi, Masahiro Yoshihara, K. Ino, M. Noguchi, T. Kamei, Yosuke Kato, S. Zaitsu, H. Nasu, Takuya Ariki, H. Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, G. Hemink, F. Moogat, Cuong Trinh, M. Higashitani, T. Pham, K. Kanazawa\",\"doi\":\"10.1109/ISSCC.2012.6177073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is achieved by 4b/cell [1] or 3b/cell [2]. The other is focusing on high performance and high reliability. To meet both demands, we develop a 19nm 112.8mm2 64Gb 2b/cell NAND flash memory with the smallest die size ever reported. 15MB/s programming throughput and 400Mb/s/pin 1.8V Toggle Mode interface [3] are achieved for the first time. Die Micrograph and features are shown in Figure 25.1.1.\",\"PeriodicalId\":255282,\"journal\":{\"name\":\"2012 IEEE International Solid-State Circuits Conference\",\"volume\":\"271 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2012.6177073\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2012.6177073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is achieved by 4b/cell [1] or 3b/cell [2]. The other is focusing on high performance and high reliability. To meet both demands, we develop a 19nm 112.8mm2 64Gb 2b/cell NAND flash memory with the smallest die size ever reported. 15MB/s programming throughput and 400Mb/s/pin 1.8V Toggle Mode interface [3] are achieved for the first time. Die Micrograph and features are shown in Figure 25.1.1.
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