XtreMOS™功率晶体管的理论分析

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430968

J. Roig, B. Desoete, P. Moens, M. Tack

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引用次数: 8

摘要

这项工作为XtreMOSTM和等效结构提供了一种新的理论方法。给出了一个解析sRonxBVdss模型，证明了XtreMOSTM结构在中压能力(50-200 V)下在大功率mosfet领域具有优越的电学性能，并且几何和工艺参数可以通过简单的表达式轻松优化。为了支持和验证理论方法，给出了数值模拟和实验数据。

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Theoretical analysis of XtreMOS™ power transistors

This work provides a new theoretical approach addressed to the XtreMOSTM and equivalent structures. An analytical sRonxBVdss model is provided to demonstrate the superior electrical performance of XtreMOSTM structure in the domain of the high power MOSFETs at medium voltage capability (50-200 V). Moreover, geometrical and technological parameters can be easily optimized by means of simple expressions. In order to support and validate the theoretical approach, numerical simulation and experimental data are included.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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