采用高介电常数材料制备的MIIS结构电容器

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) Pub Date : 1999-09-15 DOI:10.1109/TENCON.1999.818623

J. Parnklang, J. Surathammanun, A. Julprapa, V. Riewruja, W. Titiroongruang

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引用次数: 0

摘要

MIIS (Metal Insulator Intrinsic Semiconductor)结构电容器由铝、ZnO绝缘体和掺杂金原子的n型硅组成。本文介绍了用SiO/ sub2 /制作的标准MOIS(金属氧化物本征半导体)结构电容器的不同电学特性。实验结果表明，器件的阈值电压(V/sub TO/)小于MOIS器件，氧化锌电容值(C/sub OX/)高于MOIS器件，但器件的总电容值(C/sub T/)不变。

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The MIIS structure capacitor fabricated with high permittivity material

The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO/sub 2/ are presented in this paper. The experimental results show that the threshold voltage of the devices (V/sub TO/) is smaller than the MOIS devices, the zinc oxide capacitor values (C/sub OX/) are higher but the total capacitor value (C/sub T/) of the device does not change.

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Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030)

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