dc - 8 GHz GaAs常关放大器

O. Arnaud, M. Bostelmann, D. Meignant, P. Minondo
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引用次数: 0

摘要

我们开发了一系列超宽带,低功耗,单电源砷化镓常关放大器。这些放大器是用RTC Limeil数字增强模式场效应管技术制作的。整个频带的输入和输出驻波比均小于2.0。典型的噪声系数为6.2 dB,在输出功率为2 dBm时,单音-1 dB增益压缩达到8.5 dB的线性小信号增益。作为一个应用实例,多级放大器的组合将直接频率计数器灵敏度扩展到-40 dBm以下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
"D C TO 8 GHz GaAs Normally-Off Amplifiers"
We have developped a family of ultra wideband, low power, single supply GaAs normally-off amplifiers. These amplifiers are fabricated with the RTC Limeil digital enhancement mode FET technology. Input and output VSWR's are lower than 2.0 over the entire frequency band. The typical noise figure is 6.2 dB and the single tone -1 dB gain compression is reached at 2 dBm of output power for a linear small signal gain of 8.5 dB. As an application example the combination of multistage amplifiers extends direct frequency counter sensitivities to below -40 dBm.
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