用于在半导体板上形成裂纹层的软件和硬件自动控制复合体

S. Pritchin, A. Bobryshev, Aleksandr Sorokun, Tymur Zhumatii
{"title":"用于在半导体板上形成裂纹层的软件和硬件自动控制复合体","authors":"S. Pritchin, A. Bobryshev, Aleksandr Sorokun, Tymur Zhumatii","doi":"10.30929/1995-0519.2021.6.128-132","DOIUrl":null,"url":null,"abstract":"Purpose. Porous silicon is widely used in devices such as light emitters, sensors, and medical devices. The quality of operation of these devices depends on the diameter of the pore, the uniformity of its surface, and the thickness of the layer. To control the characteristics of the porous layer, the current density, etching time, and current shape are changed. As a rule, the growth is carried out using a constant current density. In this case, hydrogen bubbles are formed in the pores with a simultaneous decrease in the etching rate, which leads to the formation of small pores. This limits the pos-sibility of obtaining porous silicon with a high degree of reproducibility. Methodology The research was carried out on a semiconductor wafer. After cleaning, the silicon wafers were etched in an electrochemical cell at room temperature. For the study, two types of etching current were used: current in the form of rectangular pulses with a variable duty cycle and direct current. For the pulsed current, the density was 20 mA/cm2, the duty cycle of the pulses varied from 40 to 80% at a frequency of 7 Hz. For direct current, the etching current density was 20 mA/cm2. The etching time in both experiments was 30 minutes. Findings. The paper shows the influence of the shape of the silicon etching current on the formation of a porous layer. To control the etching process, a hardware-software automated complex for controlling the formation of a porous layer on semiconductor wafers was developed. Originality. When using a pulsed current, the structure of the porous layer becomes more uniform, as evidenced by an increase in the intensity of the photolumines-cence spectrum at a wavelength of 650 nm. Practical value. The results of the work can be used in the development of such devices as light emitters, sensors and medical devices. Сonclusions The method of etching single-crystal silicon has been improved in order to obtain a porous layer having a uniform structure by using the etching current in the form of pulses with a duty cycle of 80% and a frequency of 7 Hz.","PeriodicalId":405654,"journal":{"name":"Transactions of Kremenchuk Mykhailo Ostrohradskyi National University","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SOFTWARE AND HARDWARE AUTOMATED CONTROL COMPLEX FOR THE FORMATION OF A CRACKED LAYER ON SEMICONDUCTOR PLATES\",\"authors\":\"S. Pritchin, A. Bobryshev, Aleksandr Sorokun, Tymur Zhumatii\",\"doi\":\"10.30929/1995-0519.2021.6.128-132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Purpose. Porous silicon is widely used in devices such as light emitters, sensors, and medical devices. The quality of operation of these devices depends on the diameter of the pore, the uniformity of its surface, and the thickness of the layer. To control the characteristics of the porous layer, the current density, etching time, and current shape are changed. As a rule, the growth is carried out using a constant current density. In this case, hydrogen bubbles are formed in the pores with a simultaneous decrease in the etching rate, which leads to the formation of small pores. This limits the pos-sibility of obtaining porous silicon with a high degree of reproducibility. Methodology The research was carried out on a semiconductor wafer. After cleaning, the silicon wafers were etched in an electrochemical cell at room temperature. For the study, two types of etching current were used: current in the form of rectangular pulses with a variable duty cycle and direct current. For the pulsed current, the density was 20 mA/cm2, the duty cycle of the pulses varied from 40 to 80% at a frequency of 7 Hz. For direct current, the etching current density was 20 mA/cm2. The etching time in both experiments was 30 minutes. Findings. The paper shows the influence of the shape of the silicon etching current on the formation of a porous layer. To control the etching process, a hardware-software automated complex for controlling the formation of a porous layer on semiconductor wafers was developed. Originality. When using a pulsed current, the structure of the porous layer becomes more uniform, as evidenced by an increase in the intensity of the photolumines-cence spectrum at a wavelength of 650 nm. Practical value. The results of the work can be used in the development of such devices as light emitters, sensors and medical devices. Сonclusions The method of etching single-crystal silicon has been improved in order to obtain a porous layer having a uniform structure by using the etching current in the form of pulses with a duty cycle of 80% and a frequency of 7 Hz.\",\"PeriodicalId\":405654,\"journal\":{\"name\":\"Transactions of Kremenchuk Mykhailo Ostrohradskyi National University\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions of Kremenchuk Mykhailo Ostrohradskyi National University\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.30929/1995-0519.2021.6.128-132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions of Kremenchuk Mykhailo Ostrohradskyi National University","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30929/1995-0519.2021.6.128-132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

目的。多孔硅广泛应用于光发射器、传感器和医疗设备等器件中。这些装置的运行质量取决于孔的直径,其表面的均匀性和层的厚度。为了控制多孔层的特性,可以改变电流密度、蚀刻时间和电流形状。通常,生长是用恒定的电流密度进行的。在这种情况下,孔隙中形成氢气泡,同时蚀刻速率降低,导致小孔隙的形成。这限制了获得具有高度再现性的多孔硅的可能性。方法在半导体晶圆上进行研究。清洗后,硅晶片在室温下在电化学电池中蚀刻。在这项研究中,使用了两种类型的蚀刻电流:具有可变占空比的矩形脉冲电流和直流电流。对于脉冲电流,密度为20 mA/cm2,在7 Hz频率下脉冲的占空比从40%到80%不等。对于直流电,刻蚀电流密度为20 mA/cm2。两个实验的蚀刻时间均为30分钟。发现。研究了硅蚀刻电流的形状对多孔层形成的影响。为了控制蚀刻过程,开发了一种用于控制半导体晶圆上多孔层形成的硬件-软件自动化复合体。创意。当使用脉冲电流时,多孔层的结构变得更加均匀,正如650 nm波长处光致发光光谱强度的增加所证明的那样。实用价值。这项工作的成果可用于开发诸如光源、传感器和医疗设备等设备。Сonclusions通过使用占空比为80%、频率为7hz的脉冲形式的刻蚀电流,改进了单晶硅的刻蚀方法,以获得具有均匀结构的多孔层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SOFTWARE AND HARDWARE AUTOMATED CONTROL COMPLEX FOR THE FORMATION OF A CRACKED LAYER ON SEMICONDUCTOR PLATES
Purpose. Porous silicon is widely used in devices such as light emitters, sensors, and medical devices. The quality of operation of these devices depends on the diameter of the pore, the uniformity of its surface, and the thickness of the layer. To control the characteristics of the porous layer, the current density, etching time, and current shape are changed. As a rule, the growth is carried out using a constant current density. In this case, hydrogen bubbles are formed in the pores with a simultaneous decrease in the etching rate, which leads to the formation of small pores. This limits the pos-sibility of obtaining porous silicon with a high degree of reproducibility. Methodology The research was carried out on a semiconductor wafer. After cleaning, the silicon wafers were etched in an electrochemical cell at room temperature. For the study, two types of etching current were used: current in the form of rectangular pulses with a variable duty cycle and direct current. For the pulsed current, the density was 20 mA/cm2, the duty cycle of the pulses varied from 40 to 80% at a frequency of 7 Hz. For direct current, the etching current density was 20 mA/cm2. The etching time in both experiments was 30 minutes. Findings. The paper shows the influence of the shape of the silicon etching current on the formation of a porous layer. To control the etching process, a hardware-software automated complex for controlling the formation of a porous layer on semiconductor wafers was developed. Originality. When using a pulsed current, the structure of the porous layer becomes more uniform, as evidenced by an increase in the intensity of the photolumines-cence spectrum at a wavelength of 650 nm. Practical value. The results of the work can be used in the development of such devices as light emitters, sensors and medical devices. Сonclusions The method of etching single-crystal silicon has been improved in order to obtain a porous layer having a uniform structure by using the etching current in the form of pulses with a duty cycle of 80% and a frequency of 7 Hz.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信