温度对p沟道FinFET介电RRAM工作特性的影响

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403830

Jen Chieh Kuo, Y. King, C. Lin

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引用次数: 0

摘要

基于p通道的FinFET介电RRAM (FIND RRAM)单元已被提出用于低成本逻辑非易失性存储器(NVM)。该p通道FIND RRAM单元表现出与n通道对应器件相似的设置/重置行为，包括低设置电压、低重置电流和稳定的LRS/HRS窗口。可以在p通道WL上施加更高的WL电压，以促进更高的复位速度。此外，还研究了温度对成形、定型和复位特性的影响。

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Temperature effect on operations and characteristics of p-channel FinFET dielectric RRAM

The p-channel based FinFET Dielectric RRAM (FIND RRAM) cell has been proposed for low-cost logic nonvolatile memory (NVM). This p-channel FIND RRAM cell exhibit similar set/reset behaviors as that have been reported on n- channel counterpart, including low set voltage, low reset current and a stable LRS/HRS window. A higher WL voltage can be applied on p-channel WL to facilitate a higher reset speed. In addition, temperature effect on forming, set and reset characteristics are studied in this work.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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