窄间隙ii型超晶格的非线性光学性质

E. R. Youngdale, J. Meyer, C. Hoffman, F. J. Bartoli, W. I. Wang
{"title":"窄间隙ii型超晶格的非线性光学性质","authors":"E. R. Youngdale, J. Meyer, C. Hoffman, F. J. Bartoli, W. I. Wang","doi":"10.1364/nlo.1992.wd2","DOIUrl":null,"url":null,"abstract":"We report here the first experimental and theoretical investigation of free carrier nonlinear optical processes in Type-II superlattices with narrow energy gaps. A general analysis of the effects of semiconductor band structure on nonlinear response at long wavelengths shows that the most favorable nonlinearities may be achievable in heterostructures with an indirect band alignment, where the indirectness may be in either real or momentum space.1 One of the most relevant figures of merit for devices is An/a, where An is the nonlinear modulation of the index of refraction and a is the absorption coefficient. However, An is limited in narrow-gap materials such as Hgo.78Cdo.22Te because the large third-order nonlinear susceptibilities (y(3)) observed at CO2 wavelengths tend to severely saturate at high intensities due to the dynamic Burstein shift.2","PeriodicalId":219832,"journal":{"name":"Nonlinear Optics: Materials, Fundamentals, and Applications","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nonlinear Optical Properties of Narrow-Gap Type-II Superlattices\",\"authors\":\"E. R. Youngdale, J. Meyer, C. Hoffman, F. J. Bartoli, W. I. Wang\",\"doi\":\"10.1364/nlo.1992.wd2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report here the first experimental and theoretical investigation of free carrier nonlinear optical processes in Type-II superlattices with narrow energy gaps. A general analysis of the effects of semiconductor band structure on nonlinear response at long wavelengths shows that the most favorable nonlinearities may be achievable in heterostructures with an indirect band alignment, where the indirectness may be in either real or momentum space.1 One of the most relevant figures of merit for devices is An/a, where An is the nonlinear modulation of the index of refraction and a is the absorption coefficient. However, An is limited in narrow-gap materials such as Hgo.78Cdo.22Te because the large third-order nonlinear susceptibilities (y(3)) observed at CO2 wavelengths tend to severely saturate at high intensities due to the dynamic Burstein shift.2\",\"PeriodicalId\":219832,\"journal\":{\"name\":\"Nonlinear Optics: Materials, Fundamentals, and Applications\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nonlinear Optics: Materials, Fundamentals, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/nlo.1992.wd2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nonlinear Optics: Materials, Fundamentals, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/nlo.1992.wd2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了具有窄能隙的ii型超晶格中自由载流子非线性光学过程的首次实验和理论研究。对半导体带结构对长波非线性响应影响的一般分析表明,最有利的非线性可以在具有间接带对准的异质结构中实现,其中间接可以在实空间或动量空间中实现与器件性能最相关的数字之一是An/a,其中An是折射率的非线性调制,a是吸收系数。然而,An在窄间隙材料(如Hgo.78Cdo)中受到限制。这是因为在CO2波长处观测到的大的三阶非线性磁化率(y(3))在高强度下由于动态伯斯坦位移而趋于严重饱和
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nonlinear Optical Properties of Narrow-Gap Type-II Superlattices
We report here the first experimental and theoretical investigation of free carrier nonlinear optical processes in Type-II superlattices with narrow energy gaps. A general analysis of the effects of semiconductor band structure on nonlinear response at long wavelengths shows that the most favorable nonlinearities may be achievable in heterostructures with an indirect band alignment, where the indirectness may be in either real or momentum space.1 One of the most relevant figures of merit for devices is An/a, where An is the nonlinear modulation of the index of refraction and a is the absorption coefficient. However, An is limited in narrow-gap materials such as Hgo.78Cdo.22Te because the large third-order nonlinear susceptibilities (y(3)) observed at CO2 wavelengths tend to severely saturate at high intensities due to the dynamic Burstein shift.2
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信