{"title":"III-V型化合物半导体晶体管——从平面到纳米线结构","authors":"D. Nirmal, J. Ajayan","doi":"10.1049/pbcs073g_ch1","DOIUrl":null,"url":null,"abstract":"In this chapter, many aspects of III-V semiconductor transistors were reviewed. The following topics was discussed: epitaxial growth techniques; heterostructure and quantum well; heterojunction bipolar transistors; high electron mobility transistors; quantum well MOSFETs; and nanowire field effect transistors.","PeriodicalId":417544,"journal":{"name":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"III–V compound semiconductor transistors–from planar to nanowire structures\",\"authors\":\"D. Nirmal, J. Ajayan\",\"doi\":\"10.1049/pbcs073g_ch1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this chapter, many aspects of III-V semiconductor transistors were reviewed. The following topics was discussed: epitaxial growth techniques; heterostructure and quantum well; heterojunction bipolar transistors; high electron mobility transistors; quantum well MOSFETs; and nanowire field effect transistors.\",\"PeriodicalId\":417544,\"journal\":{\"name\":\"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/pbcs073g_ch1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs073g_ch1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
III–V compound semiconductor transistors–from planar to nanowire structures
In this chapter, many aspects of III-V semiconductor transistors were reviewed. The following topics was discussed: epitaxial growth techniques; heterostructure and quantum well; heterojunction bipolar transistors; high electron mobility transistors; quantum well MOSFETs; and nanowire field effect transistors.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
