a-Si:H - p-i-n光电二极管的瞬态光暗电流比

Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521) Pub Date : 2004-05-12 DOI:10.1109/MELCON.2004.1346762

V. Gradisnik, M Tomislav Pavlovic, B. Pivac, I. Zulim

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摘要

本文测量并比较了p-i-n - a-Si:H非晶硅光电二极管在恒光脉冲和电压脉冲下的瞬态光暗电流比(PDCR)。结果表明，在这两种情况下，单色瞬态和彩色瞬态的PDCR行为相反。根据实测的暗电流和光电流与瞬时电荷变化成正比，利用FFT方法计算电荷。所得结果表明，耗尽电荷增量比存储电荷增量小得多。

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The transient photo-dark current ratio of a-Si:H p-i-n photodiode

In this paper the transient photo-dark current ratios (PDCR)of p-i-n a-Si:H amorphous silicon photodiode on voltage pulse at constant light and voltage pulses were measured and compared. The results show opposite PDCR behaviour of monochrome and chromatic transients in these two cases. From the measured dark current and the photocurrent, which are both proportional to the instantaneous charge change, the charge was calculated using the FFT method. The obtained results show that the depletion charge increments are much smaller than the stored ones.

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Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)

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