R. Pokharel, G. Zhang, S. Amalina, K. Hikichi, K. Hashimoto, S. Taniguchi
{"title":"在低功耗CMOS晶圆上集成薄膜体声谐振器(FBAR)的极低相位噪声b类和c类振荡器的比较设计","authors":"R. Pokharel, G. Zhang, S. Amalina, K. Hikichi, K. Hashimoto, S. Taniguchi","doi":"10.1109/IMARC.2015.7411452","DOIUrl":null,"url":null,"abstract":"This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications\",\"authors\":\"R. Pokharel, G. Zhang, S. Amalina, K. Hikichi, K. Hashimoto, S. Taniguchi\",\"doi\":\"10.1109/IMARC.2015.7411452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.\",\"PeriodicalId\":307742,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2015.7411452\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2015.7411452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications
This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.
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