柔性生产中光刻工艺的吞吐量改进

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.963015

S. Yajima, T. Nakano, K. Sadachi, Y. Ikura, H. Miura, A. Tomozawa

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引用次数: 0

摘要

在从存储器件到离散器件的巨大产品变革过程中，我们针对其设计特点对光刻工艺进行了各种技术改进，具体如下:(1)建立了精细栅极加工工艺;(2)采用针对每个步骤定制的新型光刻胶工艺，优化吞吐量和加工精度;(3)建立以产品无变化生产为目标的柔性步进应用方法。因此，我们获得了以下有益的结果:(1)在没有KrF光刻的情况下，建立了0.25 /spl mu/m分立器件的处理;(2)步进处理量提高198%;(3)等待时间减少了58%。

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Throughput improvement in photolithography processing for flexible production

During the drastic product change from memory devices to discrete devices, we have made various technical improvements in photolithography processing corresponding to its design characteristics, as follows: (1) establishment of fine gate processing technology; (2) optimization of throughput and processing accuracy using new photoresist processing customized for each step; and (3) establishment of flexible stepper application methods aimed at products-change-free production. Consequently, we have obtained the following beneficial results: (1) processing of 0.25 /spl mu/m discrete devices has been set up without KrF lithography; (2) a 198% improvement in stepper throughput has been achieved; and (3) a 58% reduction of waiting time has been obtained.

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2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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