一种沟槽晶体管交叉点DRAM单元

1985 International Electron Devices Meeting Pub Date : 1985-12-01 DOI:10.1109/IEDM.1985.191075

W. Richardson, D. Bordelon, G. Pollack, A. Shah, S. Malhi, H. Shichijo, S. Banerjee, M. Elahy, R. Womack, C.-P. Wang, J. Gallia, H. Davis, P. Chatterjee

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引用次数: 47

摘要

描述了在深沟槽的侧壁上制造晶体管和电容器的1T DRAM单元。讨论了沟槽晶体管电池(TTC)的制造和性能。

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A trench transistor cross-point DRAM cell

A 1T DRAM cell with both the transistor and the capacitor fabricated on the sidewalls of a deep trench is described. Trench Transistor Cell (TTC) fabrication and characterization are discussed.

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来源期刊

1985 International Electron Devices Meeting

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