用于射频应用的可调谐线性MOS电阻

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160119

Xinbo Xiang, J. Sturm

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引用次数: 8

摘要

本文讨论了一种具有双向特性的连续可调谐线性MOS电阻器。该方案基于二阶非线性对消，采用准浮动门技术实现。该电阻器针对速度、噪声和线性度进行了优化，因此非常适合可调谐射频放大器。为了扩大调谐范围，引入了平行片。实现了一种开关策略，以保证线性损耗有限的单调调谐。采用65nm CMOS工艺制作了测试芯片，其失真-40dB，超速电压适中，峰值信号幅值为200mV，调谐比高达19。该MOS电阻器无静态功耗，布局面积为39μm × 37μm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tunable linear MOS resistor for RF applications

This paper discusses a continuously tunable linear MOS resistor with bi-directional characteristics. The proposal is based on a 2nd order nonlinearity cancellation and is implemented by quasi-floating-gate (QFG) technique. The resistor is optimized for speed, noise and linearity, which makes it well-suited for tunable RF amplifiers. Parallel slices were introduced to enlarge the tuning range. A switching strategy is implemented to guarantee monotonic tuning with limited linearity loss. A testchip is fabricated in 65nm CMOS technology, which shows a -40dB distortion with moderate overdrive voltage and 200mV peak to peak signal amplitude and a high tuning ratio of 19. This MOS resistor has no static power consumption and a layout area of 39μm × 37μm.

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来源期刊

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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