{"title":"研究了SIMOX样品制备条件对其埋藏氧化层光致发光光谱的影响","authors":"W. Skorupa, L. Rebohle, A. Revesz, H. Hughes","doi":"10.1109/SOI.1999.819885","DOIUrl":null,"url":null,"abstract":"The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer\",\"authors\":\"W. Skorupa, L. Rebohle, A. Revesz, H. Hughes\",\"doi\":\"10.1109/SOI.1999.819885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer
The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.
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