K. Miyaguchi, Y. Yoshida, T. Nishino, M. Hangai, Y. Suehiro, Sang-Seok Lee, A. Iida, O. Ishida
{"title":"一种接地共面波导MEMS开关","authors":"K. Miyaguchi, Y. Yoshida, T. Nishino, M. Hangai, Y. Suehiro, Sang-Seok Lee, A. Iida, O. Ishida","doi":"10.1109/EUMA.2003.341041","DOIUrl":null,"url":null,"abstract":"A grounded co-planar waveguide (GCPW) MEMS switch is presented. The proposed switch has a movable SiN membrane with a signal line and ground lines above a dielectric-air-metal (DAM) cavity on which a ground metal is patterned, resulting in a structure of GCPW transmission line. The electrostatic force makes an RF short path to the ground metal on the bottom of the DAM cavity with metal-to-metal contact. The ground metal which covers silicon substrate makes the switch to be on a low-resistivity silicon substrate. The measured results of the switch validate the proposed structure of the switches utilizing the DAM cavity.","PeriodicalId":156210,"journal":{"name":"2003 33rd European Microwave Conference, 2003","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Grounded Co-Planar Waveguide MEMS Switch\",\"authors\":\"K. Miyaguchi, Y. Yoshida, T. Nishino, M. Hangai, Y. Suehiro, Sang-Seok Lee, A. Iida, O. Ishida\",\"doi\":\"10.1109/EUMA.2003.341041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A grounded co-planar waveguide (GCPW) MEMS switch is presented. The proposed switch has a movable SiN membrane with a signal line and ground lines above a dielectric-air-metal (DAM) cavity on which a ground metal is patterned, resulting in a structure of GCPW transmission line. The electrostatic force makes an RF short path to the ground metal on the bottom of the DAM cavity with metal-to-metal contact. The ground metal which covers silicon substrate makes the switch to be on a low-resistivity silicon substrate. The measured results of the switch validate the proposed structure of the switches utilizing the DAM cavity.\",\"PeriodicalId\":156210,\"journal\":{\"name\":\"2003 33rd European Microwave Conference, 2003\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 33rd European Microwave Conference, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.2003.341041\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 33rd European Microwave Conference, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.2003.341041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A grounded co-planar waveguide (GCPW) MEMS switch is presented. The proposed switch has a movable SiN membrane with a signal line and ground lines above a dielectric-air-metal (DAM) cavity on which a ground metal is patterned, resulting in a structure of GCPW transmission line. The electrostatic force makes an RF short path to the ground metal on the bottom of the DAM cavity with metal-to-metal contact. The ground metal which covers silicon substrate makes the switch to be on a low-resistivity silicon substrate. The measured results of the switch validate the proposed structure of the switches utilizing the DAM cavity.
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